H
Helena Gleskova
Researcher at University of Strathclyde
Publications - 115
Citations - 3995
Helena Gleskova is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Thin-film transistor & Amorphous silicon. The author has an hindex of 31, co-authored 114 publications receiving 3811 citations. Previous affiliations of Helena Gleskova include Princeton University.
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Journal ArticleDOI
Amorphous-silicon thin-film transistors made at 280°C on clear-plastic substrates by interfacial stress engineering
TL;DR: In this paper, a model of the mechanical interaction of the TFT stack and the plastic substrate, which provides design guidelines for avoid cracking during TFT fabrication, is presented, and the model was used to successfully fabricate a-Si TFTs on novel clear-plastic substrates with a maximum process temperature of up to 280°C.
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Toward a practical model of a-Si:H defects in intensity-time-temperature space
TL;DR: This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space by focusing on the properties of the Higgs boson particle.
Proceedings ArticleDOI
Flexible Force Sensors Embedded in Office Chair for Monitoring of Sitting Postures
Amayikai A. Ishaku,Aris Tranganidas,Slavomir Matuska,Robert Hudec,Graeme McCutcheon,Lina Stankovic,Helena Gleskova +6 more
TL;DR: The results show that only a subset of the 6 sensors is needed for predicting these 9 sitting postures with high accuracy, which opens up the possibility for intelligent, real-time monitoring systems that can improve safety and wellbeing of today’s office workers.
Journal ArticleDOI
Direct Writing and Lift-Off Patterning of Copper Lines at 200°C Maximum Process Temperature
TL;DR: This chapter looks at direct writing and lift-off patterning of copper lines at 200oC maximum process temperature.
Journal ArticleDOI
Effect of substrate temperature on vapor-phase self-assembly of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
TL;DR: In this article, N-octylphosphonic acid (C8PA) was self-assembled on aluminum oxide (AlOx) from vapor in vacuum, while the substrate temperature was varied between 25 and 150°C.