H
Helena Gleskova
Researcher at University of Strathclyde
Publications - 115
Citations - 3995
Helena Gleskova is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Thin-film transistor & Amorphous silicon. The author has an hindex of 31, co-authored 114 publications receiving 3811 citations. Previous affiliations of Helena Gleskova include Princeton University.
Papers
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Journal ArticleDOI
Modeling of gate line delay in very large active matrix liquid crystal displays
TL;DR: In this paper, the authors examined the relationship between the RC delay and all important circuit parameters and showed that with a low-resistance back line and only a few via holes per line, the delay can be reduced by nearly a factor of ten.
Journal ArticleDOI
Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons ?
Helena Gleskova,Sigurd Wagner +1 more
TL;DR: In this paper, a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) is reported, based on the density of free electrons, and the model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with 1 α ranging from 0.39 to 0.76.
Journal ArticleDOI
Photoluminescence properties of a-Si:H based thin films and corresponding solar cells
Emil Pinčík,Hikaru Kobayashi,Helena Gleskova,Michal Kučera,Luc Ortega,M. Jergel,Ciro Falcony,Róbert Brunner,Tatsuo Shimizu,V. Nadazdy,Miro Zeman,Milan Mikula,Minoru Kumeda,R. A. C. M. M. van Swaaij +13 more
TL;DR: In this paper, the photoluminiscence properties of virgin, oxide layer covered and chemically treated (in KCN solutions) surfaces of a-Si:H and corresponding solar cell structures were investigated.
Patent
Printed insulators for active and passive electronic devices
TL;DR: In this article, a process for printing gate dielectrics in thin-film transistors is described, based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing.
Journal ArticleDOI
Reversibility of the light-induced saturation and annealing of defects in a-Si: H
TL;DR: In this paper, the reversibility of light-induced saturation and dark-and light-annealing of the deep-level defects in a-S:H films is presented, and the value of the saturated defect density (N sat ) in three samples obtained after initial light-soaking was observed to decrease upon cyclic lightannealing and saturation.