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Helena Gleskova

Researcher at University of Strathclyde

Publications -  115
Citations -  3995

Helena Gleskova is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Thin-film transistor & Amorphous silicon. The author has an hindex of 31, co-authored 114 publications receiving 3811 citations. Previous affiliations of Helena Gleskova include Princeton University.

Papers
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Journal ArticleDOI

Modeling of gate line delay in very large active matrix liquid crystal displays

TL;DR: In this paper, the authors examined the relationship between the RC delay and all important circuit parameters and showed that with a low-resistance back line and only a few via holes per line, the delay can be reduced by nearly a factor of ten.
Journal ArticleDOI

Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons ?

TL;DR: In this paper, a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) is reported, based on the density of free electrons, and the model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with 1 α ranging from 0.39 to 0.76.
Patent

Printed insulators for active and passive electronic devices

TL;DR: In this article, a process for printing gate dielectrics in thin-film transistors is described, based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing.
Journal ArticleDOI

Reversibility of the light-induced saturation and annealing of defects in a-Si: H

TL;DR: In this paper, the reversibility of light-induced saturation and dark-and light-annealing of the deep-level defects in a-S:H films is presented, and the value of the saturated defect density (N sat ) in three samples obtained after initial light-soaking was observed to decrease upon cyclic lightannealing and saturation.