H
Helena Gleskova
Researcher at University of Strathclyde
Publications - 115
Citations - 3995
Helena Gleskova is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Thin-film transistor & Amorphous silicon. The author has an hindex of 31, co-authored 114 publications receiving 3811 citations. Previous affiliations of Helena Gleskova include Princeton University.
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Electrophotographic patterning of thin film circuits
TL;DR: Amorphous silicon thin-film transistors on glass foil are made using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation as discussed by the authors, which is a low-cost, large-area circuit processing technology, suitable for producing backplanes for active matrix liquid crystal displays.
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150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide Substrates
TL;DR: In this paper, a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition was developed.
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Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C
TL;DR: Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of >315/spl deg/C and low coefficient of thermal expansion of <10 ppm/ /spl deg /C as mentioned in this paper.
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High-Performance Vertical Organic Electrochemical Transistors.
Mary J. Donahue,Adam Williamson,Xenofon Strakosas,Jacob T. Friedlein,Robert R. McLeod,Helena Gleskova,George G. Malliaras +6 more
TL;DR: The fabrication and characterization of OECTs with vertically stacked contacts is reported, which overcome limitations associated with traditional fabrication methods and with 2D substrates and allows exceptional control over the transistor channel length.
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Electron mobility in amorphous silicon thin-film transistors under compressive strain
Helena Gleskova,Sigurd Wagner +1 more
TL;DR: In this paper, the authors evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1% and found that the on-current and hence the electron linear mobility decrease.