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Albert V. Davydov
Researcher at National Institute of Standards and Technology
Publications - 258
Citations - 7408
Albert V. Davydov is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Nanowire & Gallium nitride. The author has an hindex of 41, co-authored 228 publications receiving 5854 citations. Previous affiliations of Albert V. Davydov include University of Florida & University of Maryland, College Park.
Papers
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Journal ArticleDOI
In situ atomic-scale imaging of electrochemical lithiation in silicon
Xiao Hua Liu,Jiangwei Wang,Shan Huang,Feifei Fan,Xu Huang,Yang Liu,Sergiy Krylyuk,Sergiy Krylyuk,Jinkyoung Yoo,Shadi A. Dayeh,Albert V. Davydov,Scott X. Mao,Scott X. Mao,S. Tom Picraux,Sulin Zhang,Ju Li,Ting Zhu,Jian Yu Huang +17 more
TL;DR: It is shown that in situ transmission electron microscopy can be used to study the dynamic lithiation process of single-crystal silicon with atomic resolution and observe a sharp interface between the crystalline silicon and an amorphous Li(x)Si alloy.
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Electric-field induced structural transition in vertical MoTe 2 - and Mo 1-x W x Te 2 -based resistive memories
Feng Zhang,Huairuo Zhang,Sergiy Krylyuk,Cory A. Milligan,Yuqi Zhu,Dmitry Zemlyanov,Leonid A. Bendersky,Benjamin P. Burton,Albert V. Davydov,Joerg Appenzeller +9 more
TL;DR: A vertical electric field is shown to induce reversible transitions between a semiconducting 2H phase, a distorted transient structure and a conducting Td phase in MoTe2 and Mo1–xWxTe2 multilayers, and used to realize vertical resistive random access memories.
Journal ArticleDOI
The 2019 materials by design roadmap
Kirstin Alberi,Marco Buongiorno Nardelli,Andriy Zakutayev,Lubos Mitas,Stefano Curtarolo,Stefano Curtarolo,Anubhav Jain,Marco Fornari,Nicola Marzari,Ichiro Takeuchi,Martin L. Green,Mercouri G. Kanatzidis,Michael F. Toney,Sergiy Butenko,Bryce Meredig,Stephan Lany,Ursula R. Kattner,Albert V. Davydov,Eric S. Toberer,Vladan Stevanović,Aron Walsh,Aron Walsh,Nam-Gyu Park,Alán Aspuru-Guzik,Daniel P. Tabor,Jenny Nelson,James Edward Murphy,Anant Achyut Setlur,John M. Gregoire,Hong Li,Ruijuan Xiao,Alfred Ludwig,Lane W. Martin,Lane W. Martin,Andrew M. Rappe,Su-Huai Wei,John D. Perkins +36 more
TL;DR: In this paper, the authors present an overview of the current state of computational materials prediction, synthesis and characterization approaches, materials design needs for various technologies, and future challenges and opportunities that must be addressed.
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Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.
Dmitry Ruzmetov,Dmitry Ruzmetov,Kehao Zhang,Gheorghe Stan,Berc Kalanyan,Ganesh R. Bhimanapati,Sarah M. Eichfeld,Robert A. Burke,Pankaj B. Shah,Terrance O'Regan,Frank J. Crowne,A. Glen Birdwell,Joshua A. Robinson,Albert V. Davydov,Tony Ivanov +14 more
TL;DR: Lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice presents a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures.
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On-the-fly closed-loop materials discovery via Bayesian active learning.
A. Gilad Kusne,A. Gilad Kusne,Heshan Yu,Changming Wu,Huairuo Zhang,Jason R. Hattrick-Simpers,Brian L. DeCost,Suchismita Sarker,Corey Oses,Cormac Toher,Stefano Curtarolo,Albert V. Davydov,Ritesh Agarwal,Leonid A. Bendersky,Mo Li,Apurva Mehta,Ichiro Takeuchi +16 more
TL;DR: An autonomous materials discovery methodology for functional inorganic compounds is demonstrated which allow scientists to fail smarter, learn faster, and spend less resources in their studies, while simultaneously improving trust in scientific results and machine learning tools.