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Hiren D. Thacker

Researcher at Oracle Corporation

Publications -  118
Citations -  3155

Hiren D. Thacker is an academic researcher from Oracle Corporation. The author has contributed to research in topics: Silicon photonics & CMOS. The author has an hindex of 29, co-authored 118 publications receiving 2978 citations. Previous affiliations of Hiren D. Thacker include Georgia Institute of Technology & Business International Corporation.

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Journal ArticleDOI

25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning

TL;DR: A high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers and fits in a compact 400 μm2 footprint is reported.
Journal ArticleDOI

Ultralow-loss, high-density SOI optical waveguide routing for macrochip interconnects

TL;DR: This work reports optical waveguides up to one meter long with 0.026 dB/cm loss fabricated in a 300nm thick SOI CMOS process and demonstrates a complete toolbox for ultralow-loss, high-density waveguide routing for macrochip interconnects.
Proceedings ArticleDOI

A 3D-IC Technology with Integrated Microchannel Cooling

TL;DR: A 3D-IC with integrated microchannel cooling is demonstrated in this article, where the demonstrated silicon die contain a through-silicon copper via density of 2500/cm2 integrated within the microchannel heat sink.
Journal ArticleDOI

Ring Resonator Modulators in Silicon for Interchip Photonic Links

TL;DR: In this article, the authors present an in-depth discussion of practical microring modulators in silicon, covering their performance metrics, design tradeoffs, optimization, p-n junction geometries, complex ring configurations, and tuning solutions.
Journal ArticleDOI

Exploiting CMOS Manufacturing to Reduce Tuning Requirements for Resonant Optical Devices

TL;DR: In this paper, the authors quantify intrawafer and interwafer variation of the position and relative spacing of resonance wavelengths for the microring arrays and confirm prior predictions that the absolute resonance positions of such devices cannot be controlled across wafers or even across reticles within a wafer.