H
Hisashi Takamizawa
Researcher at Tohoku University
Publications - 21
Citations - 372
Hisashi Takamizawa is an academic researcher from Tohoku University. The author has contributed to research in topics: Atom probe & Dopant. The author has an hindex of 11, co-authored 20 publications receiving 340 citations. Previous affiliations of Hisashi Takamizawa include CAMECA.
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Journal ArticleDOI
Dopant distributions in n-MOSFET structure observed by atom probe tomography.
Koji Inoue,Fumiko Yano,Akio Nishida,Hisashi Takamizawa,Takaaki Tsunomura,Yasuyoshi Nagai,Masayuki Hasegawa +6 more
TL;DR: The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography and the concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.
Journal ArticleDOI
Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method
Yasuo Shimizu,Hisashi Takamizawa,Koji Inoue,Fumiko Yano,Yasuyoshi Nagai,Luca Lamagna,Giovanni Mazzeo,Giovanni Mazzeo,Michele Perego,Enrico Prati,Enrico Prati +10 more
TL;DR: The unwanted diffusion of C and O-related molecules is revealed and it is shown that for C andO it is limited to the first monolayers, where Si-C bonding formation is also observed, irrespective of the spike annealing temperature.
Journal ArticleDOI
Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures
Yasuo Shimizu,Yoko Kawamura,Masashi Uematsu,Mitsuhiro Tomita,T. Kinno,N. Okada,M. Kato,Hiroshi Uchida,Mamoru Takahashi,Hiroshi Ito,H. Ishikawa,Yuzuru Ohji,Hisashi Takamizawa,Yasuyoshi Nagai,Kohei M. Itoh +14 more
TL;DR: In this article, a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon is presented.
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Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy
Yutaka Ohno,Kaihei Inoue,Yuki Tokumoto,Kentaro Kutsukake,Ichiro Yonenaga,Naoki Ebisawa,Hisashi Takamizawa,Yasuo Shimizu,Koji Inoue,Yasuyoshi Nagai,Hideto Yoshida,Seiji Takeda +11 more
TL;DR: In this article, the three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at.
Journal ArticleDOI
Influence of laser power on atom probe tomographic analysis of boron distribution in silicon
Yuan Tu,Hisashi Takamizawa,Bin Han,Yasuo Shimizu,Koji Inoue,Takeshi Toyama,Fumiko Yano,Akio Nishida,Yasuyoshi Nagai +8 more
TL;DR: The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated and it is thought to be caused by the surface migration of atoms, which is promoted by high laser power.