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Koji Inoue
Researcher at Tohoku University
Publications - 122
Citations - 1815
Koji Inoue is an academic researcher from Tohoku University. The author has contributed to research in topics: Atom probe & Dopant. The author has an hindex of 20, co-authored 119 publications receiving 1350 citations. Previous affiliations of Koji Inoue include University of Tokyo & Toyota.
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Journal ArticleDOI
Outstanding tensile properties of a precipitation-strengthened FeCoNiCrTi0.2 high-entropy alloy at room and cryogenic temperatures
Yang Tong,Da Chen,Bin Han,Bin Han,Jun-Wei Wang,Rui Feng,Tao Yang,C. Zhao,Yilu Zhao,Wei Guo,Yasuo Shimizu,C.T. Liu,Peter K. Liaw,Koji Inoue,Yasuyoshi Nagai,Alice Hu,Ji-Jung Kai +16 more
TL;DR: In this article, a precipitation-strengthened FeCoNiCrTi0.2 high-entropy alloy strengthened by two types of coherent nano-precipitates but with the same composition was fabricated, and its tensile properties at room and cryogenic temperatures (77 K) and the corresponding defect-structure evolution were investigated.
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Reversible ventricular dysfunction takotsubo cardiomyopathy
Yoshihiro J. Akashi,Haruki Musha,Keisuke Kida,Kae Itoh,Koji Inoue,Kensuke Kawasaki,Nobuyuki Hashimoto,Fumihiko Miyake +7 more
TL;DR: Recently, many cardiologists have recognized the existence of a rapidly reversible form of heart failure of unknown origin characterized by a takotsubo‐shaped, dyskineticleft ventricle on left ventriculography.
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Dopant distributions in n-MOSFET structure observed by atom probe tomography.
Koji Inoue,Fumiko Yano,Akio Nishida,Hisashi Takamizawa,Takaaki Tsunomura,Yasuyoshi Nagai,Masayuki Hasegawa +6 more
TL;DR: The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography and the concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.
Journal ArticleDOI
Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe
Koji Inoue,Fumiko Yano,Akio Nishida,Hisashi Takamizawa,Takaaki Tsunomura,Yasuyoshi Nagai,Masayuki Hasegawa +6 more
TL;DR: In this article, three dimensional dopant distributions in polycrystalline Si gate of n-type and p-type MOSFET structure were investigated by laser-assisted three dimensional atom probe.
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Composition evolution of gamma prime nanoparticles in the Ti-doped CoFeCrNi high entropy alloy
Bin Han,Jie Wei,Yang Tong,Da Chen,Yilu Zhao,Jing Wang,Feng He,Feng He,Tao Yang,Can Zhao,Yasuo Shimizu,Koji Inoue,Yasuyoshi Nagai,Alice Hu,C.T. Liu,Ji-Jung Kai +15 more
TL;DR: In this article, the composition evolution of Ni3Ti-doped CoFeCrNi high entropy alloy was studied by atom probe tomography (APT) and first-principle calculations.