Hitoshi Shiga

TL;DR: In this paper, the authors proposed a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, and measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.

TL;DR: In this article, a CMOS band-gap reference (BGR) circuit with sub-1 V output voltage was proposed, where the output voltage is the sum of the built-in voltage of the diode, Vf, and the thermal voltage, VT, of kT/q multiplied by a constant.

TL;DR: A single 3.3-V only, 8-Gb NAND flash memory with the smallest chip to date, 98.8 mm2, has been successfully developed and the program throughput is drastically improved to twice as large as previously reported and comparable to binary memories.

TL;DR: The 10MB/s programming and 93ms block copy are realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks.

TL;DR: In this article, a memory system includes a first nonvolatile semiconductor memory, a second non-volatile memory and a controller, and the controller controls the first operation and the second operation of the first memory.