Hong Koo Baik

TL;DR: In this article, the authors demonstrate an intrinsically highly foldable and stretchable thermoelectric generator that is based upon chemically exfoliated 1T-transition metal dichalcogenide (TMDC) nanosheets (NSs) for self-powered wearable electronics.

TL;DR: ) and its dep-osition requires a high-cost vacuum process, and considerable interest has focused on metal oxide semiconductors, such as In, Ga, or Zn oxides, as these exhibit high optical transparencies, and have excel-lent electrical properties with high electron mobility, chemical stability, and solution processability.

TL;DR: Th thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on a peroxo-zirconium oxide (ZrO(2)) dielectric with a maximum temperature of 350 °C are demonstrated and successfully blocked leakage current even in annealing at 300 °C.

TL;DR: A stretchable polymer channel layer for organic field-effect transistors is obtained by spin-coating a blend solution of polythiophene and rubber polymer with large stretchability of the polythyphene film layer.

TL;DR: In this paper, the authors measured the stress variation during charge and discharge process of thin-film electrodes and found that by limiting the lower cut-off voltage to 0.1 V, the cyclability of the thin-filtered electrodes was improved significantly.