Soo Sang Chae

TL;DR: In this article, the authors demonstrate an intrinsically highly foldable and stretchable thermoelectric generator that is based upon chemically exfoliated 1T-transition metal dichalcogenide (TMDC) nanosheets (NSs) for self-powered wearable electronics.

TL;DR: Th thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on a peroxo-zirconium oxide (ZrO(2)) dielectric with a maximum temperature of 350 °C are demonstrated and successfully blocked leakage current even in annealing at 300 °C.

TL;DR: The results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

TL;DR: A novel and easy strategy for fabricating solution-processed metal oxide thin-film transistors by controlling the dielectric constant of H2O through manipulation of the metal precursor solution temperature is reported, which means indium zinc oxide (IZO) thin- Film transistors fabricated from IZO solution at 4 °C can be operated after annealing at low temperatures.

TL;DR: A covalent connection of two state-of-the-art polymers-semiconducting poly-diketo-pyrrolopyrrole-thienothiophene and elastomeric poly(dimethylsiloxane) (PDMS)-in a single triblock copolymer (TBC) chain is reported, which enables high charge carrier mobility and low modulus in one system.