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Hongjun Xiang

Researcher at Fudan University

Publications -  355
Citations -  15547

Hongjun Xiang is an academic researcher from Fudan University. The author has contributed to research in topics: Multiferroics & Band gap. The author has an hindex of 64, co-authored 314 publications receiving 12916 citations. Previous affiliations of Hongjun Xiang include National Renewable Energy Laboratory & North Carolina State University.

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Controlling the Kondo effect of an adsorbed magnetic ion through its chemical bonding.

TL;DR: It is reported that the Kondo effect exerted by a magnetic ion depends on its chemical environment and is attributed to the small on-site Coulomb repulsion and the large half-width of the hybridized d-level.
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An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

TL;DR: A novel 1D/1D nanocomposite-based photodetector is successfully fabricated from high-crystalline ZnS/ZnO biaxial nanobelts for the first time, with a wide-range UV-A light photoresponse, high sensitivity, and very fast response speed.
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Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

TL;DR: It is found that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations, and the quantum confinement effect also reduces the critical hole concentration to induce ferromaggnetism in ZnO nanowires.
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Magnetic properties and energy-mapping analysis

TL;DR: It is shown that the spin orientation of a transition-metal magnetic ion can be easily explained by considering its split d-block levels as unperturbed states with the spin-orbit coupling as perturbation, and that the DM exchange between adjacent spin sites can become comparable in strength to the Heisenberg spin exchange when the two spin sites are not chemically equivalent.
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Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

TL;DR: In this article, the authors showed that there is a large disparity between the defects in Cu-and Ag-based kesterite semiconductors, i.e., the CuZn or CuCd acceptor defects have high concentration and are the dominant defects in either Cu2ZnSn(S,Se)4 or Cu2CdSnS4.