S
Shu-Shen Li
Researcher at Chinese Academy of Sciences
Publications - 248
Citations - 9431
Shu-Shen Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum dot & Band gap. The author has an hindex of 42, co-authored 238 publications receiving 8070 citations. Previous affiliations of Shu-Shen Li include China Center of Advanced Science and Technology & University of Science and Technology of China.
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Journal ArticleDOI
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
Sefaattin Tongay,Sefaattin Tongay,Hasan Sahin,Changhyun Ko,A. V. Luce,Wen Fan,Wen Fan,Kai Liu,Jian Zhou,Jian Zhou,Ying-Sheng Huang,Ching-Hwa Ho,Jinyuan Yan,D. Frank Ogletree,Shaul Aloni,Jie Ji,Shu-Shen Li,Jingbo Li,François M. Peeters,Junqiao Wu,Junqiao Wu,Junqiao Wu +21 more
TL;DR: A new member of the family ofemiconducting transition metal dichalcogenides, rhenium disulphide (ReS2), where such variation is absent and bulk behaves as electronically and vibrationally decoupled monolayers stacked together.
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Design of narrow-gap TiO2: a passivated codoping approach for enhanced photoelectrochemical activity.
TL;DR: It is proposed that the band edges of TiO2 can be modified by passivated codopants such as (Mo+C) to shift the valence band edge up significantly, while leaving the conduction band edge almost unchanged, thus satisfying the stringent requirements.
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Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors
TL;DR: In this article, the multilayer van der Waals heterostructures with different configurations are reported and their optoelectronic properties are studied and shown to possess new functionalities and superior electrical and optical properties that far exceed the one for their constituents, MoS2 or WS2.
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Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes
TL;DR: This work demonstrates that multilayer WS2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS2-based optoelectronics.
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Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors
TL;DR: It is found that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations, and the quantum confinement effect also reduces the critical hole concentration to induce ferromaggnetism in ZnO nanowires.