H
Huan Hu
Researcher at University of Electronic Science and Technology of China
Publications - 7
Citations - 40
Huan Hu is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Saturation current & PMOS logic. The author has an hindex of 2, co-authored 7 publications receiving 9 citations.
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Journal ArticleDOI
A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
TL;DR: In this paper, an n-MOSFET (MN2) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LigBT to be turned off rapidly without excessive tail current.
Journal ArticleDOI
A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes
TL;DR: Simulation results reveal that the proposed reverse-conducting (RC) lateral insulated gate bipolar transistor based on the silicon-on-insulator (SOI-LIGBT) with integrated parallel/antiparallel polysilicon diodes can realize superior RC capability and has a better tradeoff relationship than both the conventional LIGBT and the separated shorted-anode LIG BT.
Journal ArticleDOI
A Novel Double-RESURF SOI-LIGBT With Improved $V_{\mathrm{\scriptscriptstyle ON}}-{E}_{ \mathrm{\scriptscriptstyle OFF}}$ Tradeoff and Low Saturation Current
TL;DR: A double-reduced surface field technique (RESURF) insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) with deep-trench-cathode and self-biased pMOS is proposed and investigated by numerical simulation as mentioned in this paper.
Journal ArticleDOI
A Novel Double-RESURF SOI Lateral TIGBT With Self-Biased nMOS for Improved ${V}_{\text{CE(sat)}}$ – ${E}_{\text{off}}$ Tradeoff Relationship
TL;DR: In this paper, a double-reduced surface field (RESURF) silicon-on-insulator (SOI) lateral trench insulated-gate bipolar transistor (LTIGBT) with self-biased nMOS is proposed and investigated by simulation.
Proceedings ArticleDOI
A Novel Diode-Clamped Carrier-Stored SOI Lateral Superjunction IGBT with Ultralow Turn-off Loss and Saturation Current
TL;DR: In this article, a diode-clamped carrier-stored SOI lateral superjunction IGBT (LIGBT) was proposed and investigated by numerical simulations, which remarkably features a carrier stored layer (n-CS) beneath the p-base region, an SJ layer in the drift region, a p-shield region connected to the cathode electrode through two integrated series diodes via floating ohmic contact (FOC), and a trench oxide embedded between the p+ and n+ anode.