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Hugo Águas

Researcher at Universidade Nova de Lisboa

Publications -  190
Citations -  4207

Hugo Águas is an academic researcher from Universidade Nova de Lisboa. The author has contributed to research in topics: Thin film & Amorphous silicon. The author has an hindex of 32, co-authored 178 publications receiving 3447 citations. Previous affiliations of Hugo Águas include University of Lisbon.

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An integrated approach for assessing the bioreceptivity of glazed tiles to phototrophic microorganisms

TL;DR: This practical and multidisciplinary approach showed that the accelerated colonization conditions allowed different types of tile bioreceptivity to be distinguished and to be related to precise characteristics of the material.
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Design and Simple Assembly of Gold Nanostar Bioconjugates for Surface-Enhanced Raman Spectroscopy Immunoassays.

TL;DR: A proof-of-concept was established for the proposed immunoassay using Surface-Enhanced Raman Spectroscopy, and the chosen antibody is a generic immunoglobulin G (IgG) antibody, opening the application of these principles to other antibody-antigen systems.
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Surface modification of a new flexible substrate based on hydroxypropylcellulose for optoelectronic applications

TL;DR: In this paper, a gallium-doped zinc oxide (GZO) was applied to a transparent flexible substrate based on cellulose derivatives to achieve an electrical resistivity of 2.0×10 −3 Ω cm and an average optical transmittance in the visible part of the spectrum (400-700 nm) of 70% by r.f. magnetron sputtering.
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A statistics modeling approach for the optimization of thin film photovoltaic devices

TL;DR: In this article, a combination of experimental design and statistical analysis is used to explore the interactions between fabrication parameters and expected experimental outputs for the optimization of low temperature deposition of high quality intrinsic amorphous silicon (i -a-Si:H) and matching of the n -, i -, and p -silicon layers thickness to maximize the efficiency of thin film solar cells.
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Polymorphous Silicon Films Deposited at 27.12 MHz

TL;DR: In this paper, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12