Hushan Cui

TL;DR: New architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology are presented and new metrology techniques that may appear in the near future are discussed.

TL;DR: This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy.

TL;DR: In this paper, the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFET) is discussed and the process flow faces different technological challenges.

TL;DR: NGFs synthesized from the rapid pyrolysis of solid glycine particles in the presence of sodium carbonate, display an extremely large specific surface area and a graphitic-N-dominant C-N configuration and can efficiently catalyze the electrochemical reduction of molecular oxygen into water following a 4e pathway, much better than the commercial Pt/C catalyst.

TL;DR: In this article, the interface between silicon nitride (SiNx) gate dielectric grown by low pressure chemical vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical comparison of AlGaN/GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMT).