Buqing Xu

TL;DR: New architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology are presented and new metrology techniques that may appear in the near future are discussed.

TL;DR: The challenges and future opportunities of SiNWs for gas sensing have been discussed and the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have be discussed.

TL;DR: In this article , the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-v hetero-epitaxial growth on Si substrates.

TL;DR: In this article, a review of the recent progress in GeSn CVD growth is presented, including ion implantation, in situ doping technology, and ohmic contacts, GeSn detectors, Gesn transistors, and GeSn transistors.

TL;DR: In this article , a review of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology, and engineering is presented, including the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronic and biotechnology.