Z
Zhenhua Wu
Researcher at Chinese Academy of Sciences
Publications - 169
Citations - 2858
Zhenhua Wu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 21, co-authored 124 publications receiving 2179 citations. Previous affiliations of Zhenhua Wu include Samsung.
Papers
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Journal ArticleDOI
The shear mode of multilayer graphene
Ping-Heng Tan,W. P. Han,Weijie Zhao,Zhenhua Wu,Kai Chang,H. Wang,Y. F. Wang,Nicola Bonini,Nicola Marzari,Nicola M. Pugno,Nicola M. Pugno,Giorgio Savini,Antonio Lombardo,Andrea C. Ferrari +13 more
TL;DR: The interlayer shear mode of FLGs, ranging from bilayer graphene (BLG) to bulk graphite, is uncovered, and it is suggested that the corresponding Raman peak measures the interlayer coupling.
Journal ArticleDOI
The Shear Mode of Multi-Layer Graphene
Ping-Heng Tan,W. P. Han,Weijie Zhao,Zhenhua Wu,Kai Chang,H. Wang,Y. F. Wang,Nicola Bonini,Nicola Marzari,G. Savini,Antonio Lombardo,Andrea C. Ferrari +11 more
TL;DR: In this paper, the authors uncover the interlayer shear mode of multi-layer graphene samples, ranging from bilayer-graphene (BLG) to bulk graphite, and show that the corresponding Raman peak measures the inter-layer coupling.
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Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene
TL;DR: It is demonstrated theoretically how local strains in graphene can be tailored to generate a valley-polarized current, and found that electrons in opposite valleys show different Brewster-like angles and Goos-Hänchen shifts, exhibiting a close analogy with light propagating behavior.
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State of the Art and Future Perspectives in Advanced CMOS Technology.
Henry H. Radamson,Huilong Zhu,Zhenhua Wu,Xiaobin He,Hongxiao Lin,Jinbiao Liu,Jinjuan Xiang,Zhenzhen Kong,Wenjuan Xiong,Junjie Li,Hushan Cui,Jianfeng Gao,Hong Yang,Yong Du,Buqing Xu,Ben Li,Xuewei Zhao,Xuewei Zhao,Jiahan Yu,Yan Dong,Guilei Wang +20 more
TL;DR: New architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology are presented and new metrology techniques that may appear in the near future are discussed.
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Electron tunneling through double magnetic barriers on the surface of a topological insulator
TL;DR: In this paper, the authors studied electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator, and they found a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage.