H
Hong Yang
Researcher at Chinese Academy of Sciences
Publications - 63
Citations - 531
Hong Yang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Metal gate & Tin. The author has an hindex of 8, co-authored 63 publications receiving 322 citations.
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Journal ArticleDOI
State of the Art and Future Perspectives in Advanced CMOS Technology.
Henry H. Radamson,Huilong Zhu,Zhenhua Wu,Xiaobin He,Hongxiao Lin,Jinbiao Liu,Jinjuan Xiang,Zhenzhen Kong,Wenjuan Xiong,Junjie Li,Hushan Cui,Jianfeng Gao,Hong Yang,Yong Du,Buqing Xu,Ben Li,Xuewei Zhao,Xuewei Zhao,Jiahan Yu,Yan Dong,Guilei Wang +20 more
TL;DR: New architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology are presented and new metrology techniques that may appear in the near future are discussed.
Journal ArticleDOI
Miniaturization of CMOS.
Henry H. Radamson,Henry H. Radamson,Xiaobin He,Qingzhu Zhang,Jinbiao Liu,Hushan Cui,Jinjuan Xiang,Zhenzhen Kong,Wenjuan Xiong,Junjie Li,Jianfeng Gao,Hong Yang,Shihai Gu,Xuewei Zhao,Xuewei Zhao,Yong Du,Jiahan Yu,Guilei Wang +17 more
TL;DR: This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy.
Journal ArticleDOI
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process
Qinzhu Zhang,Huaxiang Yin,Lingkuan Meng,Jiaxin Yao,Junjie Li,Guilei Wang,Yudong Li,Zhenhua Wu,Wenjuan Xiong,Hong Yang,Hailing Tu,Junfeng Li,Chao Zhao,Wenwu Wang,Tianchun Ye +14 more
TL;DR: In this article, gate-all-around (GAA) nanowire (NW) p-MOSFETs with new approaches to fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first time.
Proceedings ArticleDOI
FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin
Qingzhu Zhang,Huaxiang Yin,Jun Luo,Hong Yang,Lingkuan Meng,Yudong Li,Zhenhua Wu,Yanbo Zhang,Yongkui Zhang,Changliang Qin,Junjie Li,Jianfeng Gao,Guilei Wang,Wenjuan Xiong,Jinjuan Xiang,Zhangyu Zhou,Shujian Mao,Gaobo Xu,Jinbiao Liu,Yang Qu,Tao Yang,Junfeng Li,Qiuxia Xu,Jiang Yan,Huilong Zhu,Chao Zhao,Tianchun Ye +26 more
TL;DR: In this article, a fully metallic source and drain (MSD) process on fin-on-insulator (FOI) FinFETs is investigated extensively for the first time.
Journal ArticleDOI
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
Xiaolei Wang,Xiaoqing Sun,Yuanyuan Zhang,Lixing Zhou,Jinjuan Xiang,Xueli Ma,Hong Yang,Yongliang Li,Kai Han,Jun Luo,Chao Zhao,Wenwu Wang +11 more
TL;DR: In this paper, the authors theoretically investigated the impact of charges at the ferroelectric/interlayer interface on the depolarization field of FeFETs with metal/ferroelectric, interlayer/Si gate structure.