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I. Streiter

Researcher at Chemnitz University of Technology

Publications -  6
Citations -  181

I. Streiter is an academic researcher from Chemnitz University of Technology. The author has contributed to research in topics: Porosity & Porosimetry. The author has an hindex of 5, co-authored 6 publications receiving 174 citations.

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Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO 2 xerogel films

TL;DR: A range of mesoporous xerogel low-k dielectric films were prepared and characterised using complementary techniques: Laser-generated surface acoustic waves, ellipsometric porosimetry, Rutherford backscattering and nanoindentation as mentioned in this paper.
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Characterization of thin-film aerogel porosity and stiffness with laser-generated surface acoustic waves

TL;DR: In this article, the density/porosity and Young's modulus values of a range of nanoporous silica aerogel films via dispersion of laser-generated, wideband, surface acoustic waves were measured.
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Characterization of silica xerogel films by variable-angle spectroscopic ellipsometry and infrared spectroscopy

TL;DR: In this article, the thickness and optical constants of xerogel films with low dielectric constants were derived from variable-angle spectroscopic ellipsometry measurements, and the as-prepared films were further treated by hexamethyldisilazane to achieve the hydrophobization of the pore surfaces.
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Ellipsometric study of the change in the porosity of silica xerogels after chemical modification of the surface with hexamethyldisilazane

TL;DR: Variable angle spectroscopic ellipsometry and ellipsometric porosimetry have been used to study the effect of treatment with hexamethyldisilazane (HMDS) on the porosity of silica xerogel films and chemical modification of the surface with HMDS was found to reduce the Porosity by ~15%.
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Influence of barrier and cap layer deposition on the properties of capped and non-capped porous silicon oxide

TL;DR: In this article, the influence of the deposition of PECVD SiO 2 cap and sputtered and MOCVD TiN barrier layers on the electrical properties of low k xerogel films was examined.