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Ian M. Povey
Researcher at Tyndall National Institute
Publications - 166
Citations - 3037
Ian M. Povey is an academic researcher from Tyndall National Institute. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 28, co-authored 160 publications receiving 2664 citations. Previous affiliations of Ian M. Povey include University of Salford & University of Zurich.
Papers
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The langmuir-blodgett approach to making colloidal photonic crystals from silica spheres.
TL;DR: It is shown that the layer-by-layer control of photonic crystal growth afforded by the Langmuir-Blodgett method allows for the fabrication of a range of novel, layered photonic crystals that may not be easily assembled using any other approach.
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Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
Gioele Mirabelli,Conor McGeough,Michael Schmidt,Eoin K. McCarthy,Scott Monaghan,Ian M. Povey,Melissa McCarthy,Farzan Gity,Roger Nagle,Gregory Hughes,Attilio A. Cafolla,Paul K. Hurley,Ray Duffy +12 more
TL;DR: A surface sensitivity study was performed on different transition-metal dichalcogenides (TMDs) under ambient conditions in order to understand which material is the most suitable for future device applications as mentioned in this paper.
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Zinc oxide for solar water splitting: A brief review of the material's challenges and associated opportunities
TL;DR: In this article, a short review of the opportunities associated with different synthetic approaches to manipulate the material's structure, defect-chemistry, opto-electronic properties and chemical stability is presented.
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A broadband cavity ringdown spectrometer for in-situ measurements of atmospheric trace gases
TL;DR: In this paper, a broadband cavity ringdown spectrometer and its deployment during the 2002 North Atlantic Marine Boundary Layer Experiment (NAMBLEX) to measure ambient concentrations of NO3, N2O5, I2 and OIO at the Mace Head Atmospheric Research Station, Co. Galway, Ireland was described.
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Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods
Eamon O'Connor,Scott Monaghan,Rathnait D. Long,Aileen O'Mahony,Ian M. Povey,Karim Cherkaoui,Martyn E. Pemble,Guy Brammertz,M.M. Heyns,S. B. Newcomb,Valery V. Afanas'ev,Paul K. Hurley +11 more
TL;DR: In this paper, the properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1−xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated.