M
M.M. Heyns
Researcher at Katholieke Universiteit Leuven
Publications - 291
Citations - 8295
M.M. Heyns is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Gate dielectric & High-κ dielectric. The author has an hindex of 47, co-authored 290 publications receiving 7888 citations. Previous affiliations of M.M. Heyns include University of Copenhagen Faculty of Science & IMEC.
Papers
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Journal ArticleDOI
Trap-assisted tunneling in high permittivity gate dielectric stacks
Michel Houssa,Marko Tuominen,Mohamed Naili,Valeri Afanas'ev,Andre Stesmans,Suvi Haukka,M.M. Heyns +6 more
TL;DR: In this article, the electrical characteristics of SiOx/ZrO2 and Si Ox/Ta2O5 gate dielectric stacks were investigated and the current density was shown to be strongly temperature dependent at low voltage (below about 2 V).
Journal ArticleDOI
Soft breakdown of ultra-thin gate oxide layers
M. Depas,Tanya Nigam,M.M. Heyns +2 more
TL;DR: In this article, a soft breakdown mechanism was demonstrated for these ultra-thin gate oxide layers, which corresponds with an anomalous increase of the stress induced leakage current and the occurrence of fluctuations in the current.
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Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
Michel Houssa,Luigi Pantisano,Lars-Ake Ragnarsson,Robin Degraeve,Tom Schram,Geoffrey Pourtois,S. De Gendt,Guido Groeseneken,M.M. Heyns +8 more
TL;DR: In this article, the authors give an overview of the challenges and issues pertaining to high-κ gate dielectric-based devices, including flat-band and threshold voltage control, carrier mobility degradation, charge trapping, gate wear-out and breakdown, and bias temperature instabilities.
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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more
TL;DR: In this article, thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at 6 monolayers.
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Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2
TL;DR: In this article, the energy barrier height Φ for electrons at the interfaces of various metals (Mg,Al,Ni,Cu,Au) with nanometer-thin Al2O3 and ZrO2 layers grown on (100)Si by atomic layer deposition has been directly measured using internal photoemission of electrons into the insulator.