In-Hwan Baek

TL;DR: In this article, the authors demonstrate high performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD) and demonstrate that the SnO films grown at 210 °C still contain defects and hole carriers, especially near the back-channel surface.

TL;DR: In this article, the synthesis of SnS thin films by atomic layerdeposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 °C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected.

TL;DR: The feasibility of growing amorphous In-Zn-Sn-O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications is demonstrated and the a-IZto ALD process could offer promising opportunities for a variety of emerging oxide electronics beyond planar TFTs.

TL;DR: In this paper, a flexible gas sensor operating at room temperature using vertically aligned two-dimensional SnS2 nanomaterials is presented, where the atomic layer deposition (ALD) technique allows direct growth of SnS 2 on a plastic substrate, which leads to the excellent sensing performance with respect to NO2 gas along with superior gas selectivity.

TL;DR: The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture and could be a step toward the realization of 2D metal dichalcogenides in industry.