Ga Yeon Lee

TL;DR: The feasibility of growing amorphous In-Zn-Sn-O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications is demonstrated and the a-IZto ALD process could offer promising opportunities for a variety of emerging oxide electronics beyond planar TFTs.

TL;DR: In this paper, a flexible gas sensor operating at room temperature using vertically aligned two-dimensional SnS2 nanomaterials is presented, where the atomic layer deposition (ALD) technique allows direct growth of SnS 2 on a plastic substrate, which leads to the excellent sensing performance with respect to NO2 gas along with superior gas selectivity.

TL;DR: The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture and could be a step toward the realization of 2D metal dichalcogenides in industry.

TL;DR: This work proposes a promising method for wafer-scale, conformal, and low-temperature (≤ 240 °C) synthesis of single-phase SnS2 via the atomic layer deposition technique and demonstrates non-planar and flexible TFTs to identify the feasibility of the implementation of future electronics.

TL;DR: In this article, the synthesis of a continuous and high-quality large-area layer is a key research area in the field of two-dimensional (2D) metal chalcogenides.