Journal ArticleDOI
High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.
In-Hwan Baek,In-Hwan Baek,Jung Joon Pyeon,Jung Joon Pyeon,Seong Ho Han,Ga Yeon Lee,Byung Joon Choi,Jeong Hwan Han,Taek-Mo Chung,Cheol Seong Hwang,Seong Keun Kim +10 more
Reads0
Chats0
TLDR
The feasibility of growing amorphous In-Zn-Sn-O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications is demonstrated and the a-IZto ALD process could offer promising opportunities for a variety of emerging oxide electronics beyond planar TFTs.Abstract:
A new deposition technique is required to grow the active oxide semiconductor layer for emerging oxide electronics beyond the conventional sputtering technique. Atomic layer deposition (ALD) has the benefits of versatile composition control, low defect density in films, and conformal growth over a complex structure, which can hardly be obtained with sputtering. This study demonstrates the feasibility of growing amorphous In–Zn–Sn–O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications. In the ALD of the a-IZTO film, the growth behavior indicates that there exists a growth correlation between the precursor molecules and the film surface where the ALD reaction occurs. This provides a detailed understanding of the ALD process that is required for precise composition control. The a-IZTO film with In/Zn/Sn = 10:70:20 was chosen for high-performance TFTs, among other compositions, regarding the field-effect mobility (μFE), turn-on voltage (Von), and subthreshold swing (SS) voltage. The optimize...read more
Citations
More filters
Journal ArticleDOI
Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
TL;DR: In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and highperforming thin-film transistor (TFT) devices in the context of fundamental understanding is presented.
Journal ArticleDOI
Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
TL;DR: In this article, a bilayer IGZO channel structure consisting of a 10 nm base layer and a 3 nm boost layer was designed based on a cation combinatorial study of the ALD-derived TFTs with HfO2-based gate insulators.
Journal ArticleDOI
Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction
Hyeon Joo Seul,Min Jae Kim,Hyun Ji Yang,Min Hoe Cho,Min Hee Cho,Woo Bin Song,Jae Kyeong Jeong +6 more
TL;DR: The realization of a high-mobility electron transistor (HEMT) in a ternary IGZO system using the ALD technique is reported and the gate bias stressing test results indicate that FETs with a ZnO/In1- xGaxO1.5 heterojunction channel are much more stable than those with a single In1-xGax O1.
Journal ArticleDOI
High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach.
Hyun Ji Yang,Hyeon Joo Seul,Min Jae Kim,Yerin Kim,Hyun Cheol Cho,Min Hoe Cho,Yun-Heub Song,Hoichang Yang,Jae Kyeong Jeong +8 more
TL;DR: The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited indium gallium oxide (IGO) (In1-xGaxO) films as high-mobility n-channel semiconducting layers was investigated and the In.66Ga0.34O transistor was found to show the most stable behavior against an external gate bias stress.
References
More filters
Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
Journal ArticleDOI
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Journal ArticleDOI
ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.