Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.

Memristive devices for computing

Core/Shell Nanoparticles: Classes, Properties, Synthesis Mechanisms, Characterization, and Applications

The recent advances in electrocatalysis for oxygen reduction reaction (ORR) for proton exchange membrane fuel cells (PEMFCs) are thoroughly reviewed. This comprehensive Review focuses on the low- and non-platinum electrocatalysts including advanced platinum alloys, core–shell structures, palladium-based catalysts, metal oxides and chalcogenides, carbon-based non-noble metal catalysts, and metal-free catalysts. The recent development of ORR electrocatalysts with novel structures and compositions is highlighted. The understandings of the correlation between the activity and the shape, size, composition, and synthesis method are summarized. For the carbon-based materials, their performance and stability in fuel cells and comparisons with those of platinum are documented. The research directions as well as perspectives on the further development of more active and less expensive electrocatalysts are provided.

http://repository.ust.hk/ir/bitstream/1783.1-77094/1/acs.chemrev.5b00462_withlink.pdf

Recent Advances in Electrocatalysts for Oxygen Reduction Reaction

The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by current-voltage measurements and conductive atomic force microscopy. Electric pulse-induced resistance switching was repetitively (> a few hundred times) observed with a resistance ratio ⪢102. Both the low- and high-resistance states showed linear log current versus log voltage graphs with a slope of 1 in the low-voltage region where switching did not occur. The thermal stability of both conduction states was also studied. Atomic force microscopy studies under atmosphere and high-vacuum conditions showed that resistance switching is closely related to the formation and elimination of conducting spots. The conducting spots of the low-resistance state have a few tens times higher conductivity than those of the high-resistance state and their density is also a few tens times higher which results in a ∼103 times larger overall conductivity. An interesting finding was that the area where the ...

/pdf/resistive-switching-mechanism-of-tio2-thin-films-grown-by-3nzehglgs1.pdf

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.

Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

TiO2 thin films with high dielectric constants (83–100) were grown on a Ru electrode at a growth temperature of 250 °C using the atomic-layer deposition method. The as-deposited films were crystallized with rutile structure. Adoption of O3 with a very high concentration (400g∕m3) was crucial for obtaining the rutile phase and the high dielectric constant. The leakage current density of a TiO2 film with an equivalent oxide thickness of 1.0–1.5 nm was 10−6–10−8A∕cm2 at ±1V. All these electrical properties were obtained after limited postannealing where the annealing temperature was <500°C, which is crucial to the structural stability of the Ru electrode. Therefore, these TiO2 films are very promising as the capacitor dielectrics of dynamic random access memories. TiO2 films grown on a bare Si wafer or Pt electrode by the same process had anatase structure and a dielectric constant of ∼40.

Seong Keun Kim

Papers

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

原子層蒸着で成長したTiO 2 薄膜の抵抗スイッチング機構