In Man Kang

TL;DR: In this article, the authors presented a radiofrequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field effect transistors (MOSFETs) using a 3D device simulator.

TL;DR: In this paper, the authors investigated the characteristics of dark signals in the CMOS active pixel sensor (APS) with test structures fabricated using the deep-submicron CMOS technology and found that the periphery of the photodiode (PD) is the dominant source of dark currents in our test structure, and this factor is sensitive to the distance between the sidewall of the shallow trench isolation and the n-type region of the PD.

TL;DR: In this paper, the small-signal parameters of gate-all-around tunneling field effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length.

TL;DR: In this paper, an accurate modeling and analytical parameter extraction of the non-quasi-static small-signal model of FinFETs using a three-dimensional device simulator is presented.

TL;DR: In this paper, a GaN/GaN-based fin-shaped field effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent anisotropic side wall wet etch in tetramethyl ammonium hydroxide solution.