Inanc Meric

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).

TL;DR: In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.

TL;DR: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported, demonstrating the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.

TL;DR: In this article, a chip-integrated graphene photodetector with a high responsivity of over 0.1 A W−1, high speed and broad spectral bandwidth is realized through enhanced absorption due to near-field coupling.

TL;DR: A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer.