J
J.A. del Alamo
Researcher at Massachusetts Institute of Technology
Publications - 117
Citations - 4643
J.A. del Alamo is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: High-electron-mobility transistor & Field-effect transistor. The author has an hindex of 32, co-authored 117 publications receiving 4363 citations.
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Journal ArticleDOI
Carrier-induced change in refractive index of InP, GaAs and InGaAsP
TL;DR: In this article, the change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP was theoretically estimated and the results were in reasonably good agreement with the limited experimental data available.
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GaN HEMT reliability
J.A. del Alamo,Jungwoo Joh +1 more
TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.
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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this paper, the authors present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements and identify several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.
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A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs
S.R. Bahl,J.A. del Alamo +1 more
TL;DR: In this article, a simple three-terminal technique for measuring the off-state breakdown voltage of FETs is presented, where current is injected into the drain of the on-state device and the gate is then ramped down to shut the device off.
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30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz
Dae-Hyun Kim,J.A. del Alamo +1 more
TL;DR: In this article, a 30-nm pseudomorphic high-electron mobility transistors (PHEMTs) on an InP substrate with record cutoff frequency characteristics was reported, which was achieved by paying attention to minimizing resistive and capacitive parasitics and improving short channel effects, which played a key role in high-frequency response.