J
J. Bude
Researcher at Agere Systems
Publications - 14
Citations - 1230
J. Bude is an academic researcher from Agere Systems. The author has contributed to research in topics: Gate dielectric & Gate oxide. The author has an hindex of 8, co-authored 14 publications receiving 1166 citations.
Papers
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Journal ArticleDOI
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
TL;DR: In this paper, a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic layer-deposited (ALD) Al2O3 as the gate dielectric is presented.
Journal ArticleDOI
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
Peide D. Ye,G. D. Wilk,B. Yang,J. Kwo,S. N. G. Chu,S. Nakahara,H.-J. Gossmann,Joseph Petrus Mannaerts,Minghwei Hong,K. K. Ng,J. Bude +10 more
TL;DR: In this paper, a GaAs MOSFET with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated, which shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage.
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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Peide D. Ye,G. D. Wilk,J. Kwo,B. Yang,H.-J.L. Gossmann,M.R. Frei,S.N.G. Chu,Joseph Petrus Mannaerts,M. Sergent,Minghwei Hong,K.K. Ng,J. Bude +11 more
TL;DR: In this article, the gate dielectric grown by atomic layer deposition (ALD) was demonstrated for the first time on a III-V compound semiconductor MOSFET.
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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
TL;DR: In this paper, a 1-μm-gate-length, depletion-mode, n-channel In0.2Ga0.8As/GaAs MOSFET with an Al2O3 gate oxide of 160 A shows a gate leakage current density less than 10−4 ǫ A/cm2, a maximum transconductance ∼105 mS/mm, and a strong accumulation current at Vgs>0 in addition to buried channel conduction.
Journal ArticleDOI
Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition
TL;DR: In this article, Al2O3 and HfO2 passivation has been applied to GaAs metal-semiconductor field effect transistors (MESFETs).