J
J. C. Moreno
Researcher at Centre national de la recherche scientifique
Publications - 33
Citations - 671
J. C. Moreno is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & High-electron-mobility transistor. The author has an hindex of 14, co-authored 33 publications receiving 615 citations.
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Journal ArticleDOI
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
Tim D. Veal,Philip David King,S. A. Hatfield,LR Bailey,Christopher F McConville,B. Martel,J. C. Moreno,Eric Frayssinet,Fabrice Semond,Jesús Zúñiga-Pérez +9 more
TL;DR: In this article, the authors determined the valence band offset of ZnO/AlN heterojunctions by high-resolution x-ray photoemission spectroscopy, and they showed that the VB offsets of the two types are 1.37 and 1.95 eV, respectively.
Journal ArticleDOI
GaN transistor characteristics at elevated temperatures
Amador Pérez-Tomás,Marcel Placidi,N. Baron,Sébastien Chenot,Yvon Cordier,J. C. Moreno,A. Constant,Philippe Godignon,José Antonio Alloza Millán +8 more
TL;DR: In this paper, the characteristics of different GaN transistor devices characterized at elevated temperatures for power applications are compared in terms of their specific on resistance (Ron) and specific contact resistivity (ρc) for implanted Si N+ GaN.
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Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
Amador Pérez-Tomás,A. Fontserè,J. Llobet,Marcel Placidi,Stephanie Rennesson,N. Baron,Sébastien Chenot,J. C. Moreno,Yvon Cordier +8 more
TL;DR: In this paper, the vertical bulk (drain-bulk) current properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated.
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Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A. Fontserè,Amador Pérez-Tomás,Marcel Placidi,J. Llobet,N. Baron,Sébastien Chenot,Yvon Cordier,J. C. Moreno,Peter M. Gammon,Michael R. Jennings,Marc Porti,A. Bayerl,Mario Lanza,Montserrat Nafria +13 more
TL;DR: In this paper, a range of submicron characterization tools were used to understand the conduction mechanisms through the AlGaN/GaN ohmic contact and the results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad.
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Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption
F. Médard,Jesús Zúñiga-Pérez,Pierre Disseix,M. Mihailovic,Joël Leymarie,A M Vasson,Fabrice Semond,Eric Frayssinet,J. C. Moreno,Mathieu Leroux,Stéphane Faure,Thierry Guillet +11 more
TL;DR: In this paper, the authors present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon and show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities.