Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
Tim D. Veal,Philip David King,S. A. Hatfield,LR Bailey,Christopher F McConville,B. Martel,J. C. Moreno,Eric Frayssinet,Fabrice Semond,Jesús Zúñiga-Pérez +9 more
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In this article, the authors determined the valence band offset of ZnO/AlN heterojunctions by high-resolution x-ray photoemission spectroscopy, and they showed that the VB offsets of the two types are 1.37 and 1.95 eV, respectively.Abstract:
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.read more
Citations
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Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
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Conductivity in transparent oxide semiconductors
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P25@CoAl layered double hydroxide heterojunction nanocomposites for CO2 photocatalytic reduction
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Electronic surface and dielectric interface states on GaN and AlGaN
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Band offsets, Schottky barrier heights, and their effects on electronic devices
TL;DR: In this paper, the authors review the band line-ups and band offsets between semiconductors, dielectrics, and metals, including the theory, experimental data, and the chemical trends.
References
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Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Bose-Einstein condensation of exciton polaritons
Jacek Kasprzak,Maxime Richard,S. Kundermann,A. Baas,P. Jeambrun,Jonathan Keeling,Francesca Maria Marchetti,Marzena H. Szymańska,Régis André,Jl Staehli,Vincenzo Savona,Peter B. Littlewood,Benoit Deveaud,Le Si Dang +13 more
TL;DR: A comprehensive set of experiments giving compelling evidence for BEC of polaritons of bosonic quasi-particles are detailed, which indicate the spontaneous onset of a macroscopic quantum phase.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV range
TL;DR: In this article, the electron inelastic mean free paths (IMFPs) of 14 organic compounds were computed for a group of 14 compounds: 26-n-paraffin, adenine, β-carotene, bovine plasma albumin, deoxyribonucleic acid, diphenylhexatriene, guanine, kapton, polyacetylene, poly(butene-1-sulfone), polyethylene, polymethylmethacrylate, polystyrene and poly(2-vinyl
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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.