S
S. A. Hatfield
Researcher at University of Warwick
Publications - 14
Citations - 489
S. A. Hatfield is an academic researcher from University of Warwick. The author has contributed to research in topics: Photoemission spectroscopy & Band gap. The author has an hindex of 10, co-authored 14 publications receiving 460 citations.
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Journal ArticleDOI
Bandgap and effective mass of epitaxial cadmium oxide
P. H. Jefferson,S. A. Hatfield,Tim D. Veal,Philip David King,Christopher F McConville,Jesús Zúñiga-Pérez,Vicente Muñoz-Sanjosé +6 more
TL;DR: In this article, the authors derived the room temperature bandgap and the band-edge effective mass of single crystal epitaxially grown CdO from infrared reflectivity, ultraviolet/visible optical absorption and Hall effect measurements.
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Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
Pdc King,Tim D. Veal,P. H. Jefferson,S. A. Hatfield,Lfj Piper,Christopher F McConville,Frank Fuchs,Jürgen Furthmüller,Friedhelm Bechstedt,Hai Lu,William J. Schaff +10 more
TL;DR: In this article, the bulk and surface electronic properties of Si-doped InN were investigated using high-resolution x-ray photo-emission spectroscopy, optical absorption spectrograph, and quasiparticle corrected density functional theory calculations.
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Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
Tim D. Veal,Philip David King,S. A. Hatfield,LR Bailey,Christopher F McConville,B. Martel,J. C. Moreno,Eric Frayssinet,Fabrice Semond,Jesús Zúñiga-Pérez +9 more
TL;DR: In this article, the authors determined the valence band offset of ZnO/AlN heterojunctions by high-resolution x-ray photoemission spectroscopy, and they showed that the VB offsets of the two types are 1.37 and 1.95 eV, respectively.
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The influence of conduction band plasmons on core-level photoemission spectra of InN
Phil D. C. King,Tim D. Veal,Hai Lu,S. A. Hatfield,William J. Schaff,Christopher F McConville +5 more
TL;DR: In this article, the core-level lineshape in photoemission spectra of InN was studied by high-resolution X-ray spectroscopy, and the In 3D and N 1s core-levels are asymmetric, displaying a high binding energy tail which is attributed to inelastic losses to and/or screening by conduction band plasmons in the accumulation layer present at InN surfaces.
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Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering
Paul D. Quinn,Neil R. Wilson,S. A. Hatfield,Christopher F McConville,Gavin R. Bell,Tcq Noakes,Paul Bailey,Salim Al-Harthi,F Gard +8 more
TL;DR: In this paper, the composition profile along the growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS).