抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

to be done in this area. Face recognition is a problem that scarcely clamoured for attention before the computer age but, having surfaced, has involved a wide range of techniques and has attracted the attention of some fine minds (David Mumford was a Fields Medallist in 1974). This singular application of mathematical modelling to a messy applied problem of obvious utility and importance but with no unique solution is a pretty one to share with students: perhaps, returning to the source of our opening quotation, we may invert Duncan's earlier observation, 'There is an art to find the mind's construction in the face!'.

Linear and nonlinear waves, by G. B. Whitham. Pp.636. £50. 1999. ISBN 0 471 35942 4 (Wiley).

http://nathan.instras.com/documentDB/paper-44.pdf

Surface photovoltage phenomena: theory, experiment, and applications

Gas discharge plasmas and their applications

In this work, experimental measurements of the electronic band gap of low-k organosilicate dielectrics will be presented and discussed. The measurement of bandgap energies of organosilicates will be made by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy. This energy serves as a reference point from which many other facets of the material can be understood, such as the location and presence of defect states in the bulk or at the interface. A comparison with other measurement techniques reported in the literature is presented.

https://pptl.engr.wisc.edu/images/publications/Bandgap_Measurements_v3.pdf

Measurement of bandgap energies in low-k organosilicates

The present and potential applications of plasma-aided manufacturing are discussed and described. Plasma-aided manufacturing is used for producing new materials with unusual and superior properties, for developing new chemical compounds and processes, for machining, and for altering and refining materials and surfaces. Plasma-aided manufacturing has direct applications to semiconductor fabrication, materials synthesis, welding, lighting, polymers, anticorrosion coatings, machine tools, metallurgy, electrical and electronics devices, hazardous waste removal, high-performance ceramics, and many other items in both the high-technology and the more traditional industries in the United States. >

Plasma-aided manufacturing

A Mach probe is used to measure poloidal and toroidal flows induced by a biased electrode in IMS. Mach probe theories are reviewed and classified as either magnetized or unmagnetized. A simple geometric model of the IMS Mach probe shows that the variation of the effective probe area as a function of the probe orientation with respect to the magnetic field is 20%–25%, predicting the probe to be only slightly magnetized. Measurements of the variation in the total ion saturation current collected by the probe, as the angle with respect to the magnetic field is varied, demonstrate this level of magnetization only at low neutral pressure at large minor radius, while in other cases the variation in the total collected current is negligible. Based on this result an unmagnetized model [M. Hudis and L. M. Lidsky, J. Appl. Phys. 41, 5011 (1970)] is chosen to analyze the IMS Mach probe data. Comparison of Mach probe poloidal flow measurements as a function of minor radius to calculations of the E×B drift velocity an...

Measurement of ion flows using an ‘‘unmagnetized’’ Mach probe in the interchangeable module stellarator

This work investigates the vacuum ultraviolet (VUV) emission from various feed gases producing plasmas in an electron cyclotron resonance etcher. Absolute measurements of plasma VUV emission at typical pressures for processing between 0.5 and 5 mTorr, and microwave powers between 700 and 1300 W, show levels of irradiance at the wafer position of the order of tenths of mW/cm2 and integrated photon fluxes in the 1014 photons/cm2 s range. The reported level of VUV emission is sufficient to induce radiation damage in typical metal–oxide–semiconductor devices in the form of flatband voltage shift and inversion of lightly doped substrates.

/pdf/plasma-vacuum-ultraviolet-emission-in-an-electron-cyclotron-24lkvt1zx0.pdf

Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher

Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric device structures. VUV irradiation induces photoconduction, photoemission, and photoinjection. These effects generate trapped charges within the dielectric film, which can degrade electrical properties of the dielectric. The amount of charge accumulation in low-k dielectrics depends on factors that affect photoconduction, photoemission, and photoinjection. Changes in the photo and intrinsic conductivities of SiCOH are also ascribed to the changes in the numbers of charged traps generated during VUV irradiation. The dielectric-substrate interface controls charge trapping by affecting photoinjection of charged carriers into the dielectric from the substrate. The number of trapped charges increases with increasing porosity of SiCOH because of charge trapping sites in the nanopores. Modifications to these three parameters, i.e., (1) VUV induced charge generation, (2) dielectric-substrate interface, and (3) porosity of dielectrics, can be used to reduce trapped-charge accumulation during processing of low-κ SiCOH dielectrics. Photons from the plasma are responsible for trapped-charge accumulation within the dielectric, while ions stick primarily to the surface of the dielectrics. In addition, as the dielectric constant was decreased by adding porosity, the defect concentrations increased.

J. L. Shohet

Papers

Measurement of bandgap energies in low-k organosilicates

Plasma-aided manufacturing

Measurement of ion flows using an ‘‘unmagnetized’’ Mach probe in the interchangeable module stellarator

Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher

The effects of vacuum ultraviolet radiation on low-k dielectric films