D
Dongfei Pei
Researcher at University of Wisconsin-Madison
Publications - 18
Citations - 155
Dongfei Pei is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Dielectric & Irradiation. The author has an hindex of 5, co-authored 18 publications receiving 127 citations. Previous affiliations of Dongfei Pei include Peking University.
Papers
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Journal ArticleDOI
Measurement of bandgap energies in low-k organosilicates
M. T. Nichols,Weiyi Li,Dongfei Pei,George Andrew Antonelli,Qinghuang Lin,Samer Banna,Yoshio Nishi,J. L. Shohet +7 more
TL;DR: In this paper, experimental measurements of the electronic band gap of low-k organosilicate dielectrics are presented and discussed, by examining the onset of inelastic energy loss in core level atomic spectra using X-ray photoelectron spectroscopy.
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Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes
TL;DR: In this paper, time-dependent dielectric breakdown (TDDB) is examined for low-k dielectrics in the presence of vacuum ultraviolet photon radiation and charged-particle bombardment.
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Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy
X. Guo,Dongfei Pei,Huifeng Zheng,Sean W. King,Yu-Hsien Lin,H. S. Fung,C.-C. Chen,Yoshio Nishi,J. L. Shohet +8 more
TL;DR: In this paper, the Schottky barrier at low-k a-SiOC:H/Cu interfaces was determined to be 4.8'±'0.1'eV.
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The effects of vacuum-ultraviolet radiation on defects in low-k organosilicate glass (SiCOH) as measured with electron-spin resonance
Panpan Xue,Dongfei Pei,Huifeng Zheng,Weiyi Li,Valeri Afanas'ev,Mikhail R. Baklanov,Jean-Francois de Marneffe,Yi-Hung Lin,H.-S. Fung,Cheng-chi Chen,Yoshio Nishi,J. Leon Shohet +11 more
TL;DR: In this article, the authors measured defect concentrations in SiCOH low-k dielectrics deposited on high-resistivity silicon substrates and quantified using Lorentzian fitting.
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Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation
Faraz A. Choudhury,H. M. Nguyen,Mikhail R. Baklanov,J.-F. de Marneffe,Weiyi Li,Dongfei Pei,Daniel Benjamin,Huifeng Zheng,Sean W. King,Yu-Hsien Lin,H.-S. Fung,C.-C. Chen,Yoshio Nishi,J. L. Shohet +13 more
TL;DR: In this article, the changes to electrical properties of porous low-k dielectrics as a function of porosity after VUV irradiation were investigated, and they showed that deterioration of electrical properties after the VUV exposure and the degree of damage are higher for the more porous films.