S
Sebastian Engelmann
Researcher at IBM
Publications - 148
Citations - 3078
Sebastian Engelmann is an academic researcher from IBM. The author has contributed to research in topics: Etching (microfabrication) & Plasma etching. The author has an hindex of 30, co-authored 143 publications receiving 2710 citations. Previous affiliations of Sebastian Engelmann include University of Maryland, College Park.
Papers
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Proceedings ArticleDOI
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
Sarunya Bangsaruntip,Guy M. Cohen,Amlan Majumdar,Y. Zhang,Sebastian Engelmann,Nicholas C. M. Fuller,Lynne Gignac,S. Mittal,J. Newbury,Michael A. Guillorn,Tymon Barwicz,Lidija Sekaric,Martin M. Frank,Jeffrey W. Sleight +13 more
TL;DR: In this article, undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling were demonstrated.
Journal ArticleDOI
Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication
Hsinyu Tsai,Jed W. Pitera,Hiroyuki Miyazoe,Sarunya Bangsaruntip,Sebastian Engelmann,Chi-Chun Liu,Joy Cheng,James J. Bucchignano,David P. Klaus,Eric A. Joseph,Daniel P. Sanders,Matthew E. Colburn,Michael A. Guillorn +12 more
TL;DR: A way to impart two-dimensional pattern information in graphoepitaxy-based lamellar phase DSA processes by utilizing the interactions of the BCP with the template pattern is proposed.
Journal ArticleDOI
Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
TL;DR: It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry.
Journal ArticleDOI
Experimental realization of deep-subwavelength confinement in dielectric optical resonators.
Shuren Hu,Marwan H. Khater,Rafael Salas-Montiel,E. Kratschmer,Sebastian Engelmann,William M. J. Green,Sharon M. Weiss +6 more
TL;DR: This work develops an alternative approach to achieving subwavelength localization of the electric and displacement fields that is not accompanied by inhibitive losses, and experimentally demonstrates a dielectric bowtie photonic crystal structure that supports mode volumes commensurate with plasmonic elements and quality factors that reveal ultralow losses.
Proceedings ArticleDOI
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
Sarunya Bangsaruntip,Amlan Majumdar,Guy M. Cohen,Sebastian Engelmann,Y. Zhang,M. Guillorn,Lynne Gignac,S. Mittal,W. Graham,Eric A. Joseph,D. Klaus,Josephine B. Chang,Eduard A. Cartier,Jeffrey W. Sleight +13 more
TL;DR: In this article, the first top-down CMOS ring oscillators (ROs) fabricated with gate-all-around (GAA) silicon nanowire (NW) FETs having diameters as small as 3 nm were demonstrated.