J
J. Schalwig
Researcher at Technische Universität München
Publications - 13
Citations - 1304
J. Schalwig is an academic researcher from Technische Universität München. The author has contributed to research in topics: Hydrogen & Schottky diode. The author has an hindex of 10, co-authored 13 publications receiving 1263 citations.
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Journal ArticleDOI
Playing with Polarity
Martin Stutzmann,Oliver Ambacher,Martin Eickhoff,U. Karrer,A. Lima Pimenta,R. Neuberger,J. Schalwig,Roman Dimitrov,P. J. Schuck,Robert D. Grober +9 more
TL;DR: In this paper, the influence of GaN crystal polarity on various properties of epitaxial films and electronic devices is discussed. But the authors focus on the Ga-face polarity.
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Hydrogen response mechanism of Pt-GaN Schottky diodes
J. Schalwig,Gerhard Müller,U. Karrer,Martin Eickhoff,Oliver Ambacher,Martin Stutzmann,L. Görgens,Günther Dollinger +7 more
TL;DR: In this article, a GaN-based Schottky diodes with catalytically active platinum electrodes was used to detect hydrogen in high-temperature gas sensor devices and the results indicated an interfacial effect as the origin of the sensor response to hydrogen.
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Gas sensitive GaN/AlGaN-heterostructures
TL;DR: In this paper, high electron mobility transistors (HEMT) based on GaN/AlGaN-heterostructures have been fitted with catalytically active platinum (Pt) gate electrodes to induce gas sensitivity.
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GaN-based heterostructures for sensor applications
Martin Stutzmann,G. Steinhoff,Martin Eickhoff,Oliver Ambacher,Christoph E. Nebel,J. Schalwig,R. Neuberger,Gerhard Müller +7 more
TL;DR: The potential of AlGaN/GaN heterostructures for novel sensor devices is discussed in this article, where the two-dimensional electron gas which is formed at the GAs and GAs interface due to the difference in the spontaneous polarisation of the two adjacent III-nitride layers is shown to respond very sensitively to changes in the electrostatic boundary conditions caused by the adsorption of ions, wetting by polar liquids, exposure to gases, or the piezoelectric polarisation due to mechanical strain.
Journal ArticleDOI
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications
Martin Eickhoff,J. Schalwig,G. Steinhoff,O. Weidemann,L. Görgens,R. Neuberger,M. Hermann,Barbara Baur,Gerhard Müller,Oliver Ambacher,Martin Stutzmann +10 more
TL;DR: In this paper, the piezoresistive effect in piezoelectric AlGaN layers is investigated and the dependence of the gauge factor on the Al content is attributed to the influence of strain induced piezOElectric fields.