Christoph E. Nebel

TL;DR: In this article, the formation of amine and phenyl-linker molecules on diamond was characterized using x-ray photoelectron spectroscopy, atomic force microscopy (AFM), cyclic voltammetry and field effect transistor characterization experiments.

TL;DR: The potential of AlGaN/GaN heterostructures for novel sensor devices is discussed in this article, where the two-dimensional electron gas which is formed at the GAs and GAs interface due to the difference in the spontaneous polarisation of the two adjacent III-nitride layers is shown to respond very sensitively to changes in the electrostatic boundary conditions caused by the adsorption of ions, wetting by polar liquids, exposure to gases, or the piezoelectric polarisation due to mechanical strain.

TL;DR: In this article, a simple formula for the threshold wavelength of total internal reflection was derived for amorphous hydrogenated silicon (a-Si:H) solar cells using periodically structured aluminum doped zinc oxide (ZnO:Al) with periods between 390 and 980 nm as a transparent front contact.

TL;DR: In this article, total photoyield experiments are applied to characterize p-, intrinsic, and n-type diamond with hydrogen-terminated surfaces, and a photoelectron threshold energy of 4.4 eV is detected which is attributed to the energy gap between the valence-band maximum and the vacuum level.

TL;DR: The covalently bonded formation of amine and phenyl linker molecular layers is characterized using X-ray photoelectron spectroscopy, atomic force microscope, cyclic voltammetry and field-effect transistor characterization experiments.