J. Stiegler

TL;DR: In this article, the evolution and interdependence of microstructure, stress, and bonding defects of heteroepitaxial diamond films deposited on silicon substrates has been investigated by applying scanning electron microscopy, TEM, and micro-Raman spectroscopy to the same places in the films.

TL;DR: In this article, a new method for stress determination based on polarized confocal micro-Raman is presented and used for the measurement of the stress evolution across the film thickness in the center of the sample.

TL;DR: In this paper, high-resolution spectroscopy of atomic and molecular lines in a hydrogen-methane-argon plasma was used for the investigation of the gas temperature and the atomic hydrogen concentration as a function of process parameters (power, pressure, and methane concentration) during microwave-plasma-assisted CVD of oriented diamond films on silicon(100) substrates.

TL;DR: A series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness as mentioned in this paper.

TL;DR: In this article, the intentional addition of small amounts of nitrogen to different C/H/O gas systems in microwave plasma-assisted deposition of diamond films at low substrate temperatures has been studied.