J
J. Železný
Researcher at Academy of Sciences of the Czech Republic
Publications - 36
Citations - 4340
J. Železný is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Spintronics & Antiferromagnetism. The author has an hindex of 18, co-authored 33 publications receiving 3112 citations. Previous affiliations of J. Železný include Charles University in Prague & Max Planck Society.
Papers
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Journal ArticleDOI
Electrical switching of an antiferromagnet.
Peter Wadley,B. Howells,J. Železný,J. Železný,C. Andrews,V. Hills,R. P. Campion,Vít Novák,K. Olejník,Francesco Maccherozzi,Sarnjeet S. Dhesi,S. Y. Martin,Thomas Wagner,Thomas Wagner,Joerg Wunderlich,Joerg Wunderlich,Frank Freimuth,Yuriy Mokrousov,Jan Kuneš,J.S. Chauhan,M.J. Grzybowski,M.J. Grzybowski,A. W. Rushforth,K. W. Edmonds,B. L. Gallagher,Tomas Jungwirth +25 more
TL;DR: In this paper, the authors demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter.
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Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Aurelien Manchon,J. Železný,Ioan Mihai Miron,Tomas Jungwirth,Jairo Sinova,André Thiaville,Kevin Garello,Pietro Gambardella +7 more
TL;DR: In this paper, the authors acknowledge support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin.
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Relativistic Néel-order fields induced by electrical current in antiferromagnets
J. Železný,Huawei Gao,Karel Výborný,Jan Zemen,J. Mašek,Aurelien Manchon,Joerg Wunderlich,Jairo Sinova,Tomas Jungwirth +8 more
TL;DR: It is predicted that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation.
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Spin transport and spin torque in antiferromagnetic devices
TL;DR: In this article, the role of spin transport and spin torque in potential antiferromagnetic memory devices is discussed, as well as their utility in pure and hybrid ferromagnetic/antiferrous memory devices.
Journal ArticleDOI
Strong anisotropic anomalous Hall effect and spin Hall effect in the chiral antiferromagnetic compounds Mn3X (X = Ge, Sn, Ga, Ir, Rh, and Pt)
Yang Zhang,Yang Zhang,Yan Sun,Hao Yang,J. Železný,Stuart P. P. Parkin,Claudia Felser,Binghai Yan +7 more
TL;DR: In this paper, the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds were investigated by ab initio band structure and Berry phase calculations, which revealed large and anisotropic values.