Showing papers by "Jack L. Jewell published in 1990"

Quantum well vertical cavity laser

Abstract: Distributed feeback mirror cavities are found capable of sufficient reflectance-loss characteristics to permit lasing in two or a single quantum well structure in which lasing is in the thin (quantum) dimension. Such lasers sometimes known as "quantum well surface emitting lasers" are of sufficiently low threshold value as to permit use in integrated circuits of high integration density - e.g. at 1 micron design rules. Anticipated uses, now made possible, include optical circuitry for computer chip interconnect as well as optoelectric integrated circuits for many purposes including computing itself.

Surface emitting laser arrays with uniformly separated wavelengths

Abstract: A novel and simple scheme used to achieve a 2-D array of monolithic multiple wavelength lasers is reported. Uniformly separated wavelengths are emitted from an eight-element linear array and an 8 × 8 2-D array of surface emitting lasers in the 950 nm regime. The lasers all have nearly identical light against current characteristics.

Characteristics of top-surface-emitting GaAs quantum-well lasers

Abstract: Self-aligned top-surface-emitting vertical-cavity GaAs four-quantum-well lasers emitting at 850 nm with good room temperature CW characteristics are discussed. Deep buried damaged layers by proton implantation are used to control vertical conductivity profiles for efficient current injection at the active region. Minimum CW threshold is 1.8 mA. Maximum CW output power is 1.5 mW. Laser linewidth of 0.02 AA is measured using a scanning Fabry-Perot etalon. For all sizes of lasers, the full angle beam divergences of fundamental transverse modes are twice as large as those calculated from a diffraction formula using aperture diameters. >

Compact and ultrafast holographic memory using a surface-emitting microlaser diode array.

Abstract: A compact and ultrafast holographic memory using a recently developed surface-emitting microlaser diode array is described. The system does not require a bulky laser, spatial light modulators, or beam deflectors. The memory is capable of retrieving a high-resolution page (approximately 105 bits) in less than 1 nsec.

High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers

Abstract: Highly efficient (1.2 mW/mA, >70% CW differential quantum efficiency), top-surface-emitting, vertical cavity lasers are achieved at room temperature. Buried damage layers by proton implantation are used for efficient current funnelling. The CW threshold currents are 3.5–8.0 mA, at 3.7–4.2 V bias, for 10.30 μm diameter lasers. The lasing wavelengths are 845–848 nm.

Effects of etch depth and ion implantation on surface emitting microlasers

Abstract: We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.

Optical computing and related microoptic devices.

Abstract: We investigate scaling with the cross-sectional area of energy and speed for optical devices and of optical design, speed, and thermal dissipation for device arrays. Theory and experiments clearly point to lower energy and faster speed for smaller devices and to simpler optical design, smaller propagation time delays, and higher thermal dissipation capability for smaller array sizes. We conclude that the development of high speed digital optical processors will depend on small devices interconnected by microoptic systems.

Two-Dimensional Array Microlasers for Photonic Switching

Abstract: Electrically-driven microlasers are shown to be attractive devices for photonic chip-to-chip communication or as elements of a photonic switch. Picosecond optical techniques allow us to study properties of microresonators with submicron diameters.

Effects of Etch Depth and Ion Implantation on Surface Emitting Microlasers

Abstract: We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.

Microlasers for Photonic Switching and Interconnection

Abstract: Vertical-cavity, surface-emitting lasers have great potential owing to their inherent two-dimensional geometry and very small gain nedium volumes which are essential to low threshold currents. Possible applications are optical switching/computing, photonic interconnection, high/low power laser sources, image processing, optical neural networks, etc. Driven by these high promises, there have been numerous reports on vertical cavity surface emitting laser diodes using InGaAs/GaAs/A1As, GaAs/AlGaAs structures16. In this paper, we report characteristics of discrete InGaAs microlasers and monolithic two-dimensional arrays of microlasers. The advantages of optics for communications of data over distances longer than nearby gates have been argued previously7. We proposed and demonstrated a photonic interconnect scheme using microlasers with planar optics which will be robust, accurate, and easily alignable.