Jaehyun Yang

TL;DR: This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

TL;DR: The results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.

TL;DR: The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route.

TL;DR: The highly thickness controllable growth of uniform MoS2 thin films on the wafer-scale via a spin-coating route is reported and various characterization results reveal that the synthesizedMoS2 film has wower-scale homogeneity with excellent crystalline quality and a stoichiometric chemical composition.

TL;DR: The application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition is assessed to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale.