J
James C. Blakesley
Researcher at National Physical Laboratory
Publications - 47
Citations - 3293
James C. Blakesley is an academic researcher from National Physical Laboratory. The author has contributed to research in topics: Charge carrier & Organic semiconductor. The author has an hindex of 22, co-authored 43 publications receiving 3009 citations. Previous affiliations of James C. Blakesley include University of Cambridge & Zhejiang University.
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Solution-processed ultraviolet photodetectors based on colloidal ZnO nanoparticles.
TL;DR: The photocurrent of the device is associated with a light-induced desorption of oxygen from the nanoparticle surfaces, thus removing electron traps and increasing the free carrier density which in turn reduces the Schottky barrier between contacts and ZnO nanoparticles for electron injection.
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Relationship between energetic disorder and open-circuit voltage in bulk heterojunction organic solar cells
James C. Blakesley,Dieter Neher +1 more
TL;DR: In this article, the effects of energetic disorder are incorporated through a Gaussian or exponential model of density of states for organic bulk heterojunction solar cells, and it is predicted that the open-circuit voltage depends on: (1) the donor-acceptor energy gap; (2) charge-carrier recombination rates; (3) illumination intensity; (4) the contact work functions (if not in the pinning regime); and (5) the amount of energy imbalance.
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Towards reliable charge-mobility benchmark measurements for organic semiconductors
James C. Blakesley,Fernando A. Castro,William Kylberg,George F. A. Dibb,Caroline Arantes,R. Valaski,Marco Cremona,Jong Soo Kim,Ji-Seon Kim +8 more
TL;DR: In this paper, the reproducibility of the mobility of organic semiconducting materials was investigated using the space-charge limited current (SCLC) method and the authors found that mobility measured on nominally identical devices could vary by more than one order of magnitude with the largest sources of variation being poor electrodes and film thickness variation.
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Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
Guanghao Lu,James C. Blakesley,James C. Blakesley,Scott Himmelberger,Patrick Pingel,Patrick Pingel,Johannes Frisch,Ingo Lieberwirth,Ingo Salzmann,Martin Oehzelt,Riccardo Di Pietro,Alberto Salleo,Norbert Koch,Dieter Neher +13 more
TL;DR: It is shown that blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping.
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Photogeneration and Recombination in P3HT/PCBM Solar Cells Probed by Time-Delayed Collection Field Experiments
TL;DR: In this paper, a pump-probe experiment using optical excitation and an electrical probe with a resolution of <100 ns was performed on bulk heterojunctions of poly(3-hexylthiophene) and poly(6,6)-phenylC71 butyric acid methyl ester.