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Journal ArticleDOI

Solution-processed ultraviolet photodetectors based on colloidal ZnO nanoparticles.

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TLDR
The photocurrent of the device is associated with a light-induced desorption of oxygen from the nanoparticle surfaces, thus removing electron traps and increasing the free carrier density which in turn reduces the Schottky barrier between contacts and ZnO nanoparticles for electron injection.
Abstract
A “visible-blind” solution-processed UV photodetector is realized on the basis of colloidal ZnO nanoparticles. The devices exhibit low dark currents with a resistance >1 TΩ and high UV photocurrent efficiencies with a responsivity of 61 A/W at an average intensity of 1.06 mW/cm2 illumination at 370 nm. The characteristic times for the rise and fall of the photocurrent are <0.1 s and about 1 s, respectively. The photocurrent of the device is associated with a light-induced desorption of oxygen from the nanoparticle surfaces, thus removing electron traps and increasing the free carrier density which in turn reduces the Schottky barrier between contacts and ZnO nanoparticles for electron injection. The devices are promising for use in large-area UV photodetector applications.

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Citations
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TL;DR: A comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics is provided.
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A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection.

TL;DR: It is shown that a solution-processed ultraviolet photodetector with a nanocomposite active layer composed of ZnO nanoparticles blended with semiconducting polymers can significantly outperform inorganicPhotodetectors.
References
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Hybrid Nanorod-Polymer Solar Cells

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ZnO Nanowire UV Photodetectors with High Internal Gain

TL;DR: Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products higher than approximately 10 GHz, which promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
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Nanowire ultraviolet photodetectors and optical switches

TL;DR: In this paper, the photoconducting properties of individual semiconductor nanowires are explored and the authors show the possibility of creating highly sensitive nanowire switches by exploring the photocconducting properties.
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