D
David L. Harame
Researcher at IBM
Publications - 254
Citations - 7404
David L. Harame is an academic researcher from IBM. The author has contributed to research in topics: Bipolar junction transistor & Heterojunction bipolar transistor. The author has an hindex of 42, co-authored 235 publications receiving 7249 citations. Previous affiliations of David L. Harame include GlobalFoundries & Auburn University.
Papers
More filters
Journal ArticleDOI
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
Gary L. Patton,James H. Comfort,Bernard S. Meyerson,Emmanuel F. Crabbe,G. Scilla,E. de Fresart,J.M.C. Stork,J.Y.-C. Sun,David L. Harame,Joachim N. Burghartz +9 more
TL;DR: In this article, the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator, and an emitter width of 0.9 mu m is discussed.
Journal ArticleDOI
Heterojunction bipolar transistors using Si-Ge alloys
TL;DR: In this article, the authors discuss the growth and properties of pseudomorphic Si/sub 1-x/Ge/sub x/ structures and then focus on their applications, especially the Si-sub 1 -x/ge/sub X/-base heterojunction bipolar transistor (HBT).
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application.
Journal ArticleDOI
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
Sorin P. Voinigescu,M.C. Maliepaard,J.L. Showell,G.E. Babcock,D. Marchesan,Michael Schroter,Peter Schvan,David L. Harame +7 more
TL;DR: In this article, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies and a technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified.
Journal ArticleDOI
SiGe-channel heterojunction p-MOSFET's
S. Verdonckt-Vandebroek,Emmanuel F. Crabbe,Bernard S. Meyerson,David L. Harame,Phillip J. Restle,J.M.C. Stork,Jeffrey B. Johnson +6 more
TL;DR: In this paper, the p-channel SiGe MOSFETs with SiGe channels have acceptable short-channel behavior at 0.20 /spl mu/m channel lengths and are preferable to p/sup +/ polysilicon-gate p-MOSFTs for 2.5 V operation.