J
J.Y.-C. Sun
Researcher at TSMC
Publications - 134
Citations - 4513
J.Y.-C. Sun is an academic researcher from TSMC. The author has contributed to research in topics: Bipolar junction transistor & CMOS. The author has an hindex of 37, co-authored 134 publications receiving 4449 citations. Previous affiliations of J.Y.-C. Sun include Hodges University & IBM.
Papers
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Journal ArticleDOI
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
Gary L. Patton,James H. Comfort,Bernard S. Meyerson,Emmanuel F. Crabbe,G. Scilla,E. de Fresart,J.M.C. Stork,J.Y.-C. Sun,David L. Harame,Joachim N. Burghartz +9 more
TL;DR: In this article, the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator, and an emitter width of 0.9 mu m is discussed.
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application.
Journal ArticleDOI
Deactivation of the boron acceptor in silicon by hydrogen
TL;DR: In this paper, two new experiments were presented which suggest that the "bulk-compensating donor" phenomenon observed in pSi is probably a deactivation process of the boron acceptor by hydrogen with the formation of a B−H+ pair.
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: In this paper, a detailed review of a full SiGe HBT BiCMOS process is presented, with a description of a 12-bit Digital-to-Analog Converter.
Journal ArticleDOI
Submicrometer-channel CMOS for low-temperature operation
TL;DR: In this paper, a 0.5µm-channel CMOS design optimized for liquid-nitrogen temperature operation is described, where thin gate oxide (12.5 nm) and dual polysilicon work functions (n+poly gate for n-channel and p+poly for p-channel transistors) are used.