Journal ArticleDOI
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
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TLDR
In this paper, a detailed review of a full SiGe HBT BiCMOS process is presented, with a description of a 12-bit Digital-to-Analog Converter.Abstract:
For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology. >read more
Citations
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Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications
TL;DR: The silicon-germanium heterojunction bipolar transistor (SiGe HBT) as mentioned in this paper is the first practical bandgap-engineered device to be realized in silicon and has achieved state-of-the-art performance.
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application.
Book
Silicon-Germanium Heterojunction Bipolar Transistors
TL;DR: In this paper, a Si bipolar transistor was used to achieve respectable Si bipolar performance down to liquid-nitrogen temperature (LNT = 77 K), but it is unlikely that conventional designed Si bipolar technology will offer performance attractive enough to make it a serious contender to CMOS, a proven technology for cryogenic applications.
Patent
Silicon-germanium heterojunction bipolar transistor
TL;DR: In this paper, a SiGe HBT is disclosed, which consists of a collector region consisting of a first ion implantation region in an active area as well as second and third implantation regions respectively at bottom of field oxide regions.
References
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Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Journal ArticleDOI
Surfactants in epitaxial growth.
TL;DR: In this article, the role of surface active species (surfactants) in heteroepitaxial growth was investigated and the use of a segregating surfactant was proposed to reduce the surface free energies of A and B and suppress island formation, as demonstrated in the growth of Si/Ge/Si(001) with a monolayer of As.
Journal ArticleDOI
Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this article, the authors showed that almost perfect multilayers composed of epitaxial GaAs and Ga (As 0.5 P 0.1 ) films can be made from materials with rather different lattice parameters.
Journal ArticleDOI
Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: The role of dislocation pile-ups and superkinks in the propagation of dislocations through multilayers is discussed in this article, where they are made to relieve elastic stresses generated as a result of misfit between the multilayer taken as a whole and its substrate.
Journal ArticleDOI
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
David L. Harame,James H. Comfort,John D. Cressler,Emmanuel F. Crabbe,J.Y.-C. Sun,Bernard S. Meyerson,T. Tice +6 more
TL;DR: A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application.