James W. Mayer

TL;DR: In this paper, channeling and Hall-effect measurements indicated that implanted Se and Te ions in silicon occupied substitutional sites and exhibited donor behavior similar to that found for group V elements, Zn, Cd, and Hg were found on tetrahedral interstitial sites and weak n -type behavior was observed.

TL;DR: An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si/Si098B002/Si structures grown by molecular-beam epitaxy as discussed by the authors.

Abstract: Copper and parylene-n (Pa-n) are studied for ultralarge scale integration circuits because of their low electrical resistivity, resistance to electromigration and low dielectric constant, chemical inertness, and compatibility with current integrated circuit manufacturing, respectively. Copper diffusion observed at and above 300 °C in Pa-n correlates to an increase in the crystallinity of the α phase and subsequent transformation to the more open structure of β parylene. Titanium nitride (oxygen) [TiN(O)]/titanium (Ti) bilayers are successfully implemented as a diffusion barrier. TiN is proven to be a very good diffusion barrier up to 500 °C for copper due to its large negative heat of formation and hence its thermal stability. Incorporation of an intermediate titanium layer reduced the residual stress and thermal mismatch between Pa-n and TiN. Without the Ti layer thermal cracking of TiN occurred. The presence of the buffer layer had no detrimental effects on the overall resistivity. The effectiveness of ...

TL;DR: In this article, a solid phase epitaxially grown semi-conductor is described, where a thin film of a semiconductor material together with thin film dopant are transported through a metal film onto a substrate, using a temperature below the eutectic temperature for the material.