J
Jan D'Haen
Researcher at IMEC
Publications - 317
Citations - 11570
Jan D'Haen is an academic researcher from IMEC. The author has contributed to research in topics: Thin film & Aqueous solution. The author has an hindex of 48, co-authored 302 publications receiving 10180 citations. Previous affiliations of Jan D'Haen include Katholieke Universiteit Leuven & Transnational University Limburg.
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A model for thin film texture evolution driven by surface energy effects
TL;DR: In this article, a model was developed to calculate the texture evolution of a growing film with large atomic diffusion on the surface, where the tendency for lowest surface energy was taken as the driving force for the evolution.
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Enhanced performance of polymer:fullerene bulk heterojunction solar cells upon graphene addition
Pieter Robaeys,Francesco Bonaccorso,Emilie Bourgeois,Jan D'Haen,Wouter Dierckx,Wim Dexters,Donato Spoltore,Jeroen Drijkoningen,Jori Liesenborgs,Antonio Lombardo,Andrea C. Ferrari,Frank Van Reeth,Ken Haenen,Jean Manca,Milos Nesladek +14 more
TL;DR: In this article, the short circuit current density of P3HT (Poly(3-hexylthiophene-2,5-diyl):PCBM((6,6)-Phenyl C61 butyric acid methyl ester) solar cells is enhanced by 10% upon the addition of graphene, with a 15% increase in the photon to electric conversion efficiency.
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Gas Quenching for Perovskite Thin Film Deposition
TL;DR: In this paper, the authors investigated the physical and chemical aspects of the film formation of photovoltaic perovskites, where additional focus is directed toward their environmental screening and eco-friendly processing.
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Elucidation of the Mechanism in Fluorine-Free Prepared YBa2Cu3O7−δ Coatings
Pieter Vermeir,Pieter Vermeir,Iwein Cardinael,Joseph Schaubroeck,Kim Verbeken,Michael Bäcker,Petra Lommens,Werner Knaepen,Jan D'Haen,Klaartje De Buysser,Isabel Van Driessche +10 more
TL;DR: The results suggest that a three step reaction mechanism, with a predominant role for BaCO(3), is responsible for the conversion of the initial state to the superconducting phase.
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Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
D. Van Gestel,M. J. Romero,Ivan Gordon,L. Carnel,Jan D'Haen,Guy Beaucarne,M. Al-Jassim,Jef Poortmans +7 more
TL;DR: In this paper, a very large density (∼109cm−2) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy was revealed.