S
Shui-Qing Yu
Researcher at University of Arkansas
Publications - 229
Citations - 4418
Shui-Qing Yu is an academic researcher from University of Arkansas. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 212 publications receiving 3329 citations. Previous affiliations of Shui-Qing Yu include Arizona State University & University of Arkansas at Little Rock.
Papers
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Journal ArticleDOI
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
Sattar Al-Kabi,Seyed Amir Ghetmiri,Joe Margetis,Thach Pham,Yiyin Zhou,Wei Dou,Bria Collier,Randy Quinde,Wei Du,Wei Du,Aboozar Mosleh,Jifeng Liu,Greg Sun,Richard A. Soref,John Tolle,Baohua Li,Mansour Mortazavi,Hameed A. Naseem,Shui-Qing Yu +18 more
TL;DR: In this article, optically pumped GeSn edge-emitting lasers were grown on Si substrates and the whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process.
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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Seyed Amir Ghetmiri,Wei Du,Joe Margetis,Aboozar Mosleh,Larry Cousar,Benjamin R. Conley,Lucas Domulevicz,Amjad Nazzal,Greg Sun,Richard A. Soref,John Tolle,Baohua Li,Hameed A. Naseem,Shui-Qing Yu +13 more
TL;DR: In this paper, a temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line width was conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%.
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Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
TL;DR: In this paper, the first generation n-i-GeSn/p-Si(100) photodiode detectors with Ge0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions.
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Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Joe Margetis,Sattar Al-Kabi,Wei Du,Wei Du,Wei Dou,Yiyin Zhou,Yiyin Zhou,Thach Pham,Thach Pham,Perry C. Grant,Perry C. Grant,Seyed Amir Ghetmiri,Aboozar Mosleh,Baohua Li,Jifeng Liu,Greg Sun,Richard A. Soref,John Tolle,Mansour Mortazavi,Shui-Qing Yu +19 more
TL;DR: In this paper, optically pumped GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors, achieving a maximum Sn composition of 17.5% exceeding the generally acknowledged Sn incorporation limits found with similar deposition chemistries.
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Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor
Aboozar Mosleh,Murtadha Alher,Larry Cousar,Husam H. Abu-Safe,Wei Dou,Perry C. Grant,Sattar Al-Kabi,Seyed Amir Ghetmiri,Bader Alharthi,Huong Tran,Wei Du,Mourad Benamara,Baohua Li,Mansour Mortazavi,Shui-Qing Yu,Hameed A. Naseem +15 more