J
Jenn-Ming Kuo
Researcher at Alcatel-Lucent
Publications - 6
Citations - 467
Jenn-Ming Kuo is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Reactive-ion etching & Schottky barrier. The author has an hindex of 3, co-authored 6 publications receiving 408 citations.
Papers
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Journal ArticleDOI
Dual-material gate (DMG) field effect transistor
TL;DR: In this paper, the dual material gate (DMG) FET was proposed and demonstrated, where the gate consists of two laterally contacting materials with different work functions, such that the threshold voltage near the source is more positive than that near the drain, resulting in a more rapid acceleration of charge carriers in the channel.
Journal ArticleDOI
(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications
TL;DR: In this paper, the authors systematically investigated the electrical properties of quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.5/P materials and concluded that the best composition for improving the device performance is by substituting 30% (x=0.3) of Ga atoms for Al atoms in GaInP material.
Journal ArticleDOI
RIE gate-recessed (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs double doped-channel FETs using CHF 3 +BCl 3 mixing plasma
TL;DR: In this paper, a quaternary heterostructure double doped-channel FET's (D-DCFETs) with a high uniformity of Vth was achieved.
(Al Ga ) In P/In Ga As Heterostructure Doped-Channel FETs for Microwave Power Applications
TL;DR: In this paper, the electrical properties of quaternary (Al Ga ) In P materials and concluded that the best position for improving the device performance is by substituting 30% of Ga atoms for Al atoms in GaInP material.
RIE Gate-Recessed (Al Ga ) In P/InGaAs Double Doped-Channel FETs Using CHF BCl Mixing Plasma
TL;DR: In this paper, a wide bandgap (Al Ga ) In P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible perfor- mance for devices fabricated on AlGaAs/InGaAs heterostructures.